april 2011 FDH055N15A n-channel powertrench ? mosfet ?2011 fairchild semiconductor corporation FDH055N15A rev. a4 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted thermal characteristics symbol parameter ratings units v dss drain to source voltage 150 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c, silicon limited) 167* a - continuous (t c = 100 o c, silicon limited) 118 - continuous (t c = 25 o c, package limited) 156 i dm drain current - pulsed (note 1) 668 a e as single pulsed avalanche energy (note 2,6) 835 m j dv/dt peak diode recovery dv/dt (not e 3) 6.0 v/ns p d power dissipation (t c = 25 o c) 429 w - derate above 25 o c 2.86 w/ o c t j , t stg operating and storage temperature range -55 to +175 o c t l maximum lead temperature for soldering purpose, 1/8 from case for 5 seconds 300 o c symbol parameter ratings units r jc thermal resistance, junction to case 0.35 o c/w r cs thermal resistance, case to heat sink (typical) 0.24 r ja thermal resistance, junction to ambient 40 FDH055N15A n-channel powertrench ? mosfet 150v, 167a, 5.9m features ? r ds(on) = 4.8m ( typ.)@ v gs = 10v, i d = 120a ? fast switching speed ? low gate charge ? high performance trench technology for extremely low r ds(on) ? high power and current handling capability ? rohs compliant description this n-channel mosfet is produced using fairchild semi- conductors advanced powertrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for server/telecom psu ? battery charger ? ac motor drives and uninterruptible power supplies ? off-line ups d g s to-220 g s d g s d to-247 *calculated continuous current based on maximum allowable junction temperature, package limitation current is 15 6a.
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diode characteristics device marking device package reel size tape width quant ity FDH055N15A FDH055N15A to-247 - - 30 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v 150 - - v bv dss t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c - 0.1 - v/ o c i dss zero gate voltage drain current v ds = 120v, v gs = 0v - - 1 a v ds = 120v, t c = 150 o c - - 500 i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a 2.0 - 4.0 v r ds(on) static drain to source on resistance v gs = 10v, i d = 120a - 4.8 5.9 m g fs forward transconductance v ds = 10v, i d = 120a (note 4) - 219 - s c iss input capacitance v ds = 75v, v gs = 0v f = 1mhz - 7100 9445 pf c oss output capacitance - 664 885 pf c rss reverse transfer capacitance - 23 - pf c oss(er) energy related output capacitance v ds = 75v, v gs = 0v - 1159 - pf q g(tot) total gate charge at 10v v ds = 75v, i d = 120a v gs = 10v (note 4,5) - 92 120 nc q gs gate to source gate charge - 31 - nc q gs2 gate charge threshold to plateau - 15 - nc q gd gate to drain miller charge - 16 - nc esr equivalent series resistance(g-s) drain open - 1.2 - t d(on) turn-on delay time v dd = 75v, i d = 120a v gs = 10v, r gen = 4.7 (note 4,5) - 35 80 ns t r turn-on rise time - 67 144 ns t d(off) turn-off delay time - 71 152 ns t f turn-off fall time - 21 52 ns i s maximum continuous drain to source diode forward curr ent - - 167* a i sm maximum pulsed drain to source diode forward current - - 668 a v sd drain to source diode forward voltage v gs = 0v, i sd = 120a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 120a, v ds = 75v di f /dt = 100a/ s (note 4) - 105 - ns q rr reverse recovery charge - 342 - nc notes: 1. repetitive rating: pulse width limited by maximum ju nction temperature. 2. starting t j = 25 c, l = 3 mh, i as = 23.6 a. 3. i sd 120a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c. 4. pulse test: pulse width 300 s, duty cycle 2%. 5. essentially independent of operating temperature typ ical characteristics. 6. single pulsed avalanche energy per die.
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transf er characteristics figure 3. on-resistance variation vs. figure 4. bod y diode forward voltage drain current and gate voltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 2 3 4 5 6 1 10 100 500 -55 o c 175 o c *notes: 1. v ds = 10v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 4 10 100 500 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 0 50 100 150 200 250 300 350 400 450 4.0 4.5 5.0 5.5 6.0 6.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 175 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 25 50 75 100 0 2 4 6 8 10 *note: i d = 120a v ds = 30v v ds = 75v v ds = 120v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 200 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -100 -50 0 50 100 150 200 0.4 0.8 1.2 1.6 2.0 2.4 2.8 *notes: 1. v gs = 10v 2. i d = 120a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] -100 -50 0 50 100 150 200 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 200 0.01 0.1 1 10 100 1000 10ms 10 s 100 s 1ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse dc 25 50 75 100 125 150 175 0 45 90 135 180 limited by package r jc = 0.35 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 0 30 60 90 120 150 0 2 4 6 8 e oss , [ j ] v ds , drain to source voltage [ v ]
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 5 typical performance characteristics (continued) figu re 12. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.35 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & wavef orms
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDH055N15A n-channel powertrench ? mosfet FDH055N15A rev. a4 www.fairchildsemi.com 8 to-247-3l dimensions in millimeters mechanical dimensions
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unifet? vcx? visualmax? xs? tm ? tm tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. rev. i54
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